Water Vapor Permeability

Water vapor permeability by us is made of twelve brass bottles. It is used to measure water vapor permeability of leather. All the components used in this equipment are chrome/ zinc plating & are painted to work effectively against corrosion.

A Comparison of Trace Organic Vapor Analysis - Static SPME, Dynamic SPME, and Thermal Desorption Methods

This undergraduate project focuses on comparing sampling methods for detecting 2,3-dimethyl-2,3-dinitrobutane (DMNB), a common taggant in some commercial explosives. Solid phase microextraction (SPME), both static and dynamic, and thermal desorption from Tenax® are compared for precision (RSD) and for the limit of detection (LOD) and limit of quantitation (LOQ) using a GC/MS in the negative chemical ionization mode. The static SPME was found to be the least sensitive method, with dynamic SPME approximately 6X and thermal desorption approximately 25X more sensitive. Full details of the SPME and thermal desorption sampling techniques will be illustrated.

Advanced Decline Curve Analysis in Vapor-Dominated Geothermal Reservoirs

The Fetkovich decline curve analysis method was extended for application to vapor-dominated geothermal reservoirs to estimate the permeability-thickness product (kh) from a well's transient production response. The analytic dimensionless terms for pressure, steam flowrate, decline rate, and decline time were derived for saturated steam using the real gas pseudopressure and customary geothermal production units of pounds-mass per hour. The derived terms were numerically validated using "Geysers-like" reservoir properties at permeabilities of 1, 10, and 100 mD and at a range of initial matrix liquid saturations from 0 to 100%. The rate-time responses collapsed onto a single set of curves using the derived dimensionless terms, validating the derived dimensionless equations. This collapse was accomplished by including the effective compressibility of a boiling liquid or by an alternative formulation considering an apparent time. This technique was applied to actual field production data at The Geysers, California, the world's largest developed geothermal, vapor-dominated reservoir. The production data for over 100 wells in the southeast Geysers were analyzed and the permeability-thickness products determined by application of the derived analytic dimensionless terms and the Fetkovich production decline type curve.

Analysis of Fuel Vapor Characteristics in an Aircraft Fuel Tank Ullage.

As a prerequisite to a comprehensive analysis of aircraft fuel tank fire and explosion hazards, a vapor-liquid equilibrium thermodynamic analysis was developed to assess the fuel vapor behavior in an aircraft fuel tank ullage. The analysis was based on the Peng-Robinson equation of state and the extended corresponding-states method. Jet-A fuel was treated as a pseudo single-component fluid. The calculated fuel/air mass ratios followed the trend observed in previous measurements.

Analysis Of Phosphorus In Chemical Vapor Deposited Films For Semiconductor Device Fabrication

A semiconductor is a crystalline material having a conductivity between that of a conductor and an insulator. The conductivity of semiconductors can be varied by changes in temperature, optical excitation, and impurity content. This variability of electrical properties makes the semiconductor material of elementary crystalline silicon an ideal material for electronic device fabrication. Silicon has the ability of undergoing a large variety of processing steps without the problems of decomposition. One such process involved in fabrication is the chemical vapor deposition of silicon dioxide films on the silicon. Chemical vapor deposition (CVD) can be defined as a material synthesis method in which the constituents of the vapor phase react to form a solid film at the surface of a silicon wafer. Dielectric layers such as the deposited silicon dioxide, and phosphorus doped oxides, silicon dioxide rich with phosphorus pentoxide, are used in semiconductor device fabrication for the insulation between conducting layers, for diffusion and ion implantation masks, and for passification to protect devices from impurities, scratches, and moisture.